Contact Resistance between Si and AuGeSb/Cr/NiCr/Ni Films.

Contact resistance to SrRuO3 and La0.67Sr0.33MnO3 epitaxial films

Contact Resistance in Schottky Contact Gated-Four-Probe a-Si Thin-Film Transistor

The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gat...

Thermal contact resistance between two nanoparticles

We compute the thermal conductance between two nanoparticles in contact based on the Molecular Dynamics technique. The contact is generated by letting both particles stick together under van der Waals attractions. The thermal conductance is derived from the fluctuation-dissipation theorem and the time fluctuations of the exchanged power. We show that the conductance is proportional to the atoms...

Effect of Contact Pressure and Frequency on Contact Heat Transfer Between Exhaust Valve and its Seat

The hot gases produced by the internal combustion engines passes through the exhaust valve and causes high temperatures in the exhaust valve and its seat. To avoid damaging the exhaust valve, heat must be transferred from the valve to its seat during the contact they make at the opening and closing cycle. Heat transfer rate from the exhaust valve to its seat is a function of many factors. One o...

Universal point contact resistance between thin-film superconductors

Michael Hermele,1 Gil Refael,2 Matthew P. A. Fisher,3 and Paul M. Goldbart4 1Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2Department of Physics, California Institute of Technology, Pasadena, California 91125, USA 3Kavli Institute for Theoretical Physics, University of California, Santa Barbara, California 93106, USA 4Department of Physics, U...